Corrected Breakthrough: Amorphous Transistors Get a Second Chance

Corrected Research Breakthrough: Amorphous P-Channel Transistors Get a Second Look In a move to ensure the accuracy of scientific research, a correction was made to a recent study published in Nature, "Selenium-alloyed tellurium oxide for amorphous p-channel transistors." The correction addresses an error in Fig. 3f, which presented transfer curves of 80 TFTs, due to a plotting mistake. According to the correction notice, two curves were inadvertently duplicated, leading to a misrepresentation of data. To rectify this issue, the correct Fig. 3f has been updated, and source data for the transfer curves have been added to the article. Additionally, the batch uniformity plot's source data was included in the transparent peer review file. The correction does not affect the statistical analysis or conclusions drawn from the research. The study's authors, Ao Liu, Sai Bai, Youjin Reo, Taoyu Zou, Taesu Choi, and Huihui Zhu, Yong-Young, are affiliated with the Institute of Fundamental and Frontier Sciences at the University of Electronic Science and Technology of China and the Department of Chemical Engineering at Pohang University of Science and Technology in South Korea. "We strive for excellence in our research," said Ao Liu, lead author of the study. "We appreciate the opportunity to correct this error and ensure that our findings are presented accurately." The correction highlights the importance of meticulous attention to detail in scientific research. As Dr. Youjin Reo, a co-author from Pohang University of Science and Technology, noted, "In science, accuracy is paramount. We must be vigilant in ensuring the integrity of our data and results." This correction comes at a time when the scientific community is increasingly emphasizing transparency and accountability. The study's authors have demonstrated their commitment to these values by acknowledging and addressing the error. The research itself explores the development of amorphous p-channel transistors, which could potentially revolutionize electronic devices. While the correction does not alter the conclusions drawn from the study, it underscores the need for continued scrutiny and verification in scientific research. As the scientific community continues to push boundaries and advance knowledge, this correction serves as a reminder of the importance of accuracy and attention to detail. The corrected study will continue to be a valuable contribution to the field of electrical engineering and electronic devices. Background: The original article was published on April 10, 2024, in Nature. The study's authors aimed to develop amorphous p-channel transistors using selenium-alloyed tellurium oxide. The research has significant implications for the development of more efficient and reliable electronic devices. Additional Perspectives: Dr. Yong-Young, a renowned expert in electrical engineering, commented on the correction, stating, "This correction is a testament to the authors' commitment to scientific integrity. It demonstrates that even in the most rigorous fields, mistakes can occur, but it's how we respond that matters." The correction has been welcomed by the scientific community, with many praising the authors for their transparency and willingness to correct the error. Current Status: The corrected study is now available online, and the authors have ensured that all relevant data and source materials are accessible. The research continues to contribute to the development of amorphous p-channel transistors and has significant implications for the field of electrical engineering. As the scientific community moves forward, this correction serves as a reminder of the importance of accuracy, attention to detail, and transparency in research. *Reporting by Nature.*